해외석학초빙

[1차년도] 2020년 11월 27일 14:00, Wenge Yang (HPSTAR, China)
2021-04-07 17:26:37 조회수412

  Emerging materials from pressure induced electronic transition


  • 일 시 : 2020년 11월 27일 금요일 14:00

  • 연 사 : Wenge Yang

  • 소 속 : Center for High Pressure Science & Technology Advanced Research, China

  • 장 소 : 온라인 진행 ( https://us02web.zoom.us/j/84281887278 , 줌회의 ID: 842 8188 7278 )

  • 초 록

  Pressure as a clean tuning tool, has been extensively used to explore novel properties of materials that can not be realized at ambient conditions. Under pressure, the electronic configuration involving valence and inner shell electrons can be largely re-arranged to minimize the total energy, which leads to charge transfer, spin crossover, and even forming new bonds. As a result, emerging phenomena such as carrier-type switching, carrier density increasing, excitation state lifetime change, insulator-to-metal and even superconducting transition, and giant enhancement in piezoelectricity have been observed. In this talk, we like to present the recent high pressure studies on the abnormal transport properties of topologic Dirac semimetals, enhancement in electronic transport and photoelectric properties in bismuth oxysulfide, spin quench assistant superconducting in new type of Fe-based alloy, and extending the lifetime of photoluminescence in hydride perovskite solar battery materials. With a suite of characterization tools including various synchrotron radiation and optical probes, we explored their electronic mechanism which provides guideline to develop the novel route to realize them at ambient conditions.

Session2-2 

     
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