Operando electron microscopy investigation of domain dynamics in twisted van der Waals materials
일 시 : 2023년 11월 08일 수요일 17:00
연 사 : 유 효 빈 교수 (서강대학교)
장 소 : 자연과학관 B117호
HOST : 이 창 민 교수님
초 록
Control of interlayer stacking angle in two-dimensional (2-D) van der Waals (vdW) heterostructure enables one to engineer the crystal symmetry to imprint novel functionality. By stacking two layers of transition metal dichalcogenides (TMD) with designed twist angle, one can break the inversion symmetry and thereby develop vertical electric polarization. The direction of the electric polarization can be switched electrically, suggesting that the twisted bilayer TMD can host ferroelectricity. Such ferroelectricity reported in twisted bilayer vdW system is distinguished from conventional ferroelectrics in that the lateral sliding of the constituent layers induces vertical electric polarizations. Due to the reduced dimension, the ferroelectric domains do not require forward growth along the third dimension, suggesting unconventional 2-D domain dynamics under an applied electric field.
Here we employ operando transmission electron microscopy (TEM) to investigate the domain dynamics in 2-D vdW ferroelectrics. Operando TEM technique enables one to examine the structural change in the environment that mimics the device operating condition. On a thin SiN based TEM compatible platform, we fabricated double capacitor structure on 2D vdW ferroelectrics. Electrical gating in double capacitor structure and real time observation of structural change in a simultaneous manner provides an insight onto the switching mechanism of the 2-D vdW ferroelectrics.[1]
[1] K. Ko et al., Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers, Nature Materials 22, 992 (2023)