1. 연수기간 : 2022. 07. 17 ~ 2022. 07. 21 (총 4박 5일)
2. 연수국가 : Jeju, Korea
3. 연수기관명 : KPS (The Korean Physical Society)
4. 연수자 : 신진인력 연구교원
5. 연수주제 : Controllable Surface Oxidation and Doping Effect of Indium (II) Selenide (InSe) Using Polymer Passivation
Indium selenide (InSe), one of the van der Wald crystal structures, is a metal chalcogenide III-VI compound that can be exfoliated and has stable semiconductor properties. It has attracted considerable attention due to its low effective electron mass (0.14M), direct bandgap in bulk form (1.26 eV), and high charge mobility (300cm2/Vs). However, unlike TMDC, it is susceptible to moisture, so when exposed to air, it gradually oxidizes and degrades the device's performance. In an effort to overcome this, passivation is attempted using PMMA or h-BN, but the oxidation that occurs on the InSe surface itself is still unresolved. In this study, we tried two different types of polymer doping to control the surface oxidation of InSe and improve the device's performance. First, Benzyl Viologen (BV) as an n-type dopant injects electrons into the InSe layer to improve charge mobility. A CYTOP used as a p-type dopant injects holes, resulting in a p-doping effect. To confirm that these two types of polymers act as a passivation to prevent oxidation of the InSe surface, the polymers were covered the surface of the InSe FET. Then, the electrical characteristics of the InSe according to the concentration of the polymer were measured. This study makes the development of high-performance InSe devices useful by controlling InSe surface oxidation with polymers.